Test of VLSI fundamentals and elements of VHDL are a plus but not required.Previous experience with semiconductor device electrical characterization is a strong plus.Solid state physics at the master’s level.Strong curiosity to explore a subject at the frontier between memory and optoelectronics.Must be enrolled in a master's program for the duration of the internship. To this extent the student is expected to conduct process (COMSOL / Sentaurus sprocess) and device level simulation / modeling to explore novel memory concepts intended for Edge AI CMOS imagers. The second axis of this work is to explore breakthrough ideas of memory elements, expanding the domain of study to non-volatile memory points to be co-integrated monolithically on the imager chip. The motivated student will have the opportunity to work in a multi-level approach from standalone devices down to Mpixel size test chip variants using state of the art 3D integrated BSI (Back Side Illuminated CMOS Image sensor) chips. Device conduction mechanisms, lifetime, endurance (cycling), data retention, and the physics that governs the device parameters will be explored in detail as well as their interaction with pixel operation and critical parameters such as pixel noise, ghost, and lag effects. The proposed work is centered around two axes: First, in-depth characterization of novel memory points based on high-k alloys and their interaction with scaled pixel circuitry in 3D integrated circuits. In this internship, the candidate will have the opportunity to explore novel 3D integrated memory devices targeting aggressive pixel scaling. For all those reasons, BEOL integrated memories are highly attractive for 3D BSI pixel applications to either minimize the sensor surface footprint or add additional functionalities and enable innovative pixel devices. Such applications, coupled to the strong pixel scaling trend require highly dense memory points that can be integrated locally in the pixel or logic, and are compatible to 3D integration. Moreover, state of the art BSI devices use intricate 3D pixel stacking where to pixel array and associated logic are vertically stacked using heterogenous integration approaches such as molecular hybrid bonding. Such world-sensing artificial “eyes” require high miniaturization coupled to complex functionalities like global shutter and high dynamic range. Simple image acquisition is no longer the principal application. The meteoric rise of applications such as autonomous cars, robots, human-machine interaction has strongly diversified the needs for image sensors. In 2018, we were ranked by the Randstad Employer Brand Research Award among the 5 most attractive companies in France, for our values of excellence, our integrity and the respect of our employees. Everywhere microelectronics makes a positive contribution to people lives, ST is there. And together with our customers, we are enabling smarter driving, homes, factories, and cities, along with the next generation of mobile and Internet of Things devices. ST’s products are found everywhere today. STMicroelectronics is a leading semiconductor company, a world key player thanks to our 43,200 employees including 8,300 working in R&D.
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